Material and Device Characteristics of MBE Microwave Power...

MRS Proceedings 1991 / 1 Vol. 241

Material and Device Characteristics of MBE Microwave Power FETs with Buffer Layers Grown at Low Temperature (300°C)

Ballingall, J. M., Ho, Pin, Smith, R. P., Wang, S., Tessmer, G., Yu, T., Hall, Ernest L., Hutchins, Gudrun
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Volume:
241
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-241-171
Date:
January, 1991
File:
PDF, 2.65 MB
english, 1991
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