Defect Formation by Ion Implantation in Cz-Si Studied by a...

MRS Proceedings 1992 / 1 Vol. 262

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

Uedono, A., Ujihira, Y., Wei, L., Tabuki, Y., Tanigawa, S., Sugiura, J., Ogasawara, M., Tamura, M.
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Volume:
262
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-262-1061
Date:
January, 1992
File:
PDF, 410 KB
english, 1992
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