Low Energy Ion Beam Modification of AlNxOy Thin Film for...

MRS Proceedings 1992 / 1 Vol. 268

Low Energy Ion Beam Modification of AlNxOy Thin Film for Insulated Gate Field Effect Transistors

Chan, James S., Cheung, Nathan W., Yu, Kin Man
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Volume:
268
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-268-377
Date:
January, 1992
File:
PDF, 305 KB
english, 1992
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