Ultra-Shallow P+/N Junctions Formed by SiF4...

MRS Proceedings 1992 / 1 Vol. 279

Ultra-Shallow P+/N Junctions Formed by SiF4 Preamorphization and BF3 Implantation Using Plasma Immersion Ion Implantation

Jones, Erin C., Im, Seongil, Cheung, Nathan W.
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Volume:
279
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-279-255
Date:
January, 1992
File:
PDF, 790 KB
english, 1992
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