GaN-AlxGa1−xN Heterostructures Deposition by Low Pressure...

MRS Proceedings 1992 / 1 Vol. 281

GaN-AlxGa1−xN Heterostructures Deposition by Low Pressure Metalorganic Chemical Vapor Deposition for Metal Insulator Semiconductor Field Effect Transistor (Misfet) Devices

Asif Khan, M., Kuznia, J. N., Bhattarai, A. R., Olson, D. T.
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Volume:
281
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-281-769
Date:
January, 1992
File:
PDF, 714 KB
english, 1992
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