Characterization of GeSi Layer Formed by High Dose Ge...

Characterization of GeSi Layer Formed by High Dose Ge Implantation into Si

Cheung, W.Y., Wong, S.P., Wilson, I.H., Zhang, T.H.
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Volume:
316
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-316-759
Date:
January, 1993
File:
PDF, 304 KB
english, 1993
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