Characterization of GeSi Layer Formed by High Dose Ge Implantation into Si
Cheung, W.Y., Wong, S.P., Wilson, I.H., Zhang, T.H.Volume:
316
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-316-759
Date:
January, 1993
File:
PDF, 304 KB
english, 1993