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The Relationship between InGaAs Channel Layer Thickness and Device Performance in High Electron Mobility Transistors
Meshkinpour, M., Goorsky, M. S., Streit, D. C., Block, T., Wojtowicz, M., Rammohan, K., Rich, D. H.Volume:
340
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-340-327
Date:
January, 1994
File:
PDF, 1.10 MB
english, 1994