Resistance Decrease of Phosphorus Ion Implanted Poly-Si...

MRS Proceedings 1995 / 1 Vol. 403

Resistance Decrease of Phosphorus Ion Implanted Poly-Si Thin Films During Low Temperature Annealing

Tokioka, H., Masutani, Y., Goto, Y., Nagao, S., Kurokawa, H.
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Volume:
403
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-403-405
Date:
January, 1995
File:
PDF, 852 KB
english, 1995
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