Intermediate Layers in the A-Si:H Growth Processes

MRS Proceedings 1996 / 1 Vol. 420

Intermediate Layers in the A-Si:H Growth Processes

Aivazov, A. A., Bodyagin, N. V., Vikhrov, S. P.
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Volume:
420
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-420-467
Date:
January, 1996
File:
PDF, 302 KB
english, 1996
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