Dopant incorporation efficiencies of SiC crystals grown on...

MRS Proceedings 1996 / 1 Vol. 423

Dopant incorporation efficiencies of SiC crystals grown on {1100}-face

Sugiyama, Naohiro, Okamoto, Atsuto, Tani, Toshihiko, Kamiya, Nobuo
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Volume:
423
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-423-583
Date:
January, 1996
File:
PDF, 1.58 MB
english, 1996
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