Surface Roughness of Silicon-Nitride Gate Insulators...

MRS Proceedings 1996 / 1 Vol. 424

Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge

Meiling, H., Grotenhuis, E. Ten, Weg, W. F. van der, Hautala, J. J., Westendorp, J. F. M.
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Volume:
424
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-424-19
Date:
January, 1996
File:
PDF, 420 KB
english, 1996
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