Modelling Geometrical Effects of Parasitic and Contact...

Modelling Geometrical Effects of Parasitic and Contact Resistance of FET Devices

Reeves, Geoffrey K., Harrison, H. Barry, Leech, Patrick W.
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Volume:
427
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-427-147
Date:
January, 1996
File:
PDF, 1.52 MB
english, 1996
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