Ultra-low Contact Resistivity by High Concentration Germanium and Boron Ion Implantation Combined with Low Temperature Annealing
Murakoshi, A., Iwase, M., Koike, M., Niiyama, H., Suguro, K.Volume:
427
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-427-153
Date:
January, 1996
File:
PDF, 789 KB
english, 1996