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The Effect Of Ion-Implantation Induced Defects On Strain Relaxation In GexSi1−x/Si Heterostuctures
Glasko, J. M., Zou, J., Cockayne, D. J. H., Gerald, J. Fitz, KringhøJ, P., Elliman, R. G.Volume:
442
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-442-367
Date:
January, 1996
File:
PDF, 1.99 MB
english, 1996