Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC...

MRS Proceedings 1996 / 1 Vol. 449

Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy

Nam, O. H., Bremser, M. D., Ward, B. L., Nemanich, R. J., Davis, R. F.
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Volume:
449
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-449-107
Date:
January, 1996
File:
PDF, 2.22 MB
english, 1996
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