GaN Crystals Grown in the Increased Volume High-Pressure...

MRS Proceedings 1996 / 1 Vol. 449

GaN Crystals Grown in the Increased Volume High-Pressure Reactors

Porowski, S., Bockowski, M., Lucznik, B., Wroblewski, M., Krukowski, S., Grzegory, I., Leszczynski, M., Nowak, G., Pakula, K., Baranowski, J.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
449
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-449-35
Date:
January, 1996
File:
PDF, 2.21 MB
english, 1996
Conversion to is in progress
Conversion to is failed