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Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures > 1100 °C
Zolper, J. C., Han, J., Biefeld, R. M., Van Deusen, S. B., Wampler, W. R., Pearton, S. J., Williams, J. S., Tan, H. H., Karlicek, R. J., Stall, R. A.Volume:
468
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-468-401
Date:
January, 1997
File:
PDF, 401 KB
english, 1997