Optimization of III-N Based Devices Grown by RF Atomic...

MRS Proceedings 1997 / 1 Vol. 468

Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence

Van Hove, J. M., Chow, P. P., Klaassen, J. J., Hickman, R., Wowchak, A. M., Croswell, D. R., Polley, C.
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Volume:
468
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-468-51
Date:
January, 1997
File:
PDF, 323 KB
english, 1997
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