Extending the Use of NO Dielectrics for DRAM by Ultrathin...

MRS Proceedings 1997 / 1 Vol. 470

Extending the Use of NO Dielectrics for DRAM by Ultrathin Silicon Nitride RTCVD with In Situ Ammonia and Hydrogen Pre-Deposition Surface Conditioning

Tiner, Paul A., Khamankar, Rajesh B., Johnston, Clark D., Park, Song C., Pas, Michael F., Violette, Katherine E., Wise, Rick L.

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Volume:

470

Language:

english

Journal:

MRS Proceedings

DOI:

10.1557/proc-470-387

Date:

January, 1997

File:

PDF, 1.11 MB

english, 1997

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