Characterization Of Si-Doped GaN on (00.1) Sapphire Grown...

MRS Proceedings 1997 / 1 Vol. 482

Characterization Of Si-Doped GaN on (00.1) Sapphire Grown by MOCVD

Kim, Chang Soo, Lee, Dong-Kun, Lee, Cheul-Ro, Now, Sam Kyu, Lee, In-Hwan, Bae, In-Ho
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
482
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-482-567
Date:
January, 1997
File:
PDF, 356 KB
english, 1997
Conversion to is in progress
Conversion to is failed