Simulation of Vacancy Pairs in GaN Using Tight-Binding...

MRS Proceedings 1997 / 1 Vol. 482

Simulation of Vacancy Pairs in GaN Using Tight-Binding Molecular Dynamics

Boucher, Derrick E., Gál, Zoltán A., DeLeo, Gary G., Fowler, W. Beall
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Volume:
482
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-482-941
Date:
January, 1997
File:
PDF, 372 KB
english, 1997
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