Recombination Strength at Intra and Intergrain Defects in...

Recombination Strength at Intra and Intergrain Defects in Crystalline Silicon Investigated by Low Temperature Lbic Scan Maps

Perichaud, I., Martinuzzi, S.
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Volume:
510
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-510-633
Date:
January, 1998
File:
PDF, 2.50 MB
english, 1998
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