Electrical Characterization of Defects Introduced in n-GaN...

MRS Proceedings 1998 / 1 Vol. 537

Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation

Goodman, S. A., Auret, F. D., Koschnick, F. K., Spaeth, J.-M., Beaumont, B., Gibart, P.
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Volume:
537
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-537-g6.12
Date:
January, 1998
File:
PDF, 393 KB
english, 1998
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