Modeling the Dependence of the Gate Current on Ge Content...

MRS Proceedings 1999 / 1 Vol. 567

Modeling the Dependence of the Gate Current on Ge Content in Ultrathin Gate Dielectric Pmos Devices with Poly-Si1−Gex Gate Material

Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., Hauser, J. R., Wortman, J. J.
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Volume:
567
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-567-127
Date:
January, 1999
File:
PDF, 360 KB
english, 1999
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