Comparison of Valence-Band Tunneling in Pure SiO2,...

MRS Proceedings 1999 / 1 Vol. 567

Comparison of Valence-Band Tunneling in Pure SiO2, Composite SiO2 /Ta2O5, and Pure Ta2O5, in Mosfets with 1.0 nm-Thick SiO2-Equivalent Gate Dielectrics

Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, J. R., Wortman, J. J.
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Volume:
567
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-567-515
Date:
January, 1999
File:
PDF, 316 KB
english, 1999
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