Lateral InxGa1−x, P Heterostructures Obtained by Single...

MRS Proceedings 1999 / 1 Vol. 570

Lateral InxGa1−x, P Heterostructures Obtained by Single Step Growth on Pre-Patterned Substrate by Chemical Beam Epitaxy

de Castro, M.P.P., Betitni, J., Ribeiro, C.A., Carvalho, M.M., Frateschi, N.C.

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Volume:

570

Language:

english

Journal:

MRS Proceedings

DOI:

10.1557/proc-570-79

Date:

January, 1999

File:

PDF, 2.24 MB

english, 1999

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