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Homo-Epitaxial and Selective Area Growth of 4H and 6H Silicon Carbide Using a Resistively Heated Vertical Reactor
Eshun, Ebenezer, Taylor, Crawford, Spencer, M. G., Kornegay, Kevin, Ferguson, Ian, Gurray, Alex, Stall, RickVolume:
572
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-572-173
Date:
January, 1999
File:
PDF, 1.18 MB
english, 1999