Pendeo-Epitaxial Growth of GaN on SiC and Silicon...

MRS Proceedings 1999 / 1 Vol. 572

Pendeo-Epitaxial Growth of GaN on SiC and Silicon Substrates via Metalorganic Chemical Vapor Deposition

Linthicum, K. J., Gehrke, T., Thomson, D., Ronning, C., Carlson, E. P., Zorman, C. A., Mehregany, M., Davis, R. F.
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Volume:
572
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-572-307
Date:
January, 1999
File:
PDF, 1.97 MB
english, 1999
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