Epitaxial Realignment of In-Situ Doped Polycrystalline...

MRS Proceedings 1999 / 1 Vol. 587

Epitaxial Realignment of In-Situ Doped Polycrystalline Silicon for Advanced BiCMOS Technologies

Chang, K., Thomas, S.G., Lee, T-C., Gregory, R.B., O'meara, D., Noering, K., Kirchgessner, J., Fresquet, G., Parker, J., TILLACK, B.

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Volume:

587

Language:

english

Journal:

MRS Proceedings

DOI:

10.1557/proc-587-o6.10

Date:

January, 1999

File:

PDF, 1019 KB

english, 1999

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