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Epitaxial Realignment of In-Situ Doped Polycrystalline Silicon for Advanced BiCMOS Technologies
Chang, K., Thomas, S.G., Lee, T-C., Gregory, R.B., O'meara, D., Noering, K., Kirchgessner, J., Fresquet, G., Parker, J., TILLACK, B.Volume:
587
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-587-o6.10
Date:
January, 1999
File:
PDF, 1019 KB
english, 1999