Process Improvements for Reductions in Total Charge and...

Process Improvements for Reductions in Total Charge and Interface Trap Densities of Thermally-Grown Sub-3.5nm-Thick Silicon Nitrides

Dang, Sanjit Singh, Takoudis, Christos G.
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Volume:
592
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-592-213
Date:
January, 1999
File:
PDF, 320 KB
english, 1999
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