Structural and Electronic Properties of Line Defects in GaN

Structural and Electronic Properties of Line Defects in GaN

Elsner, Joachim, Blumenau, Alexander Th., Frauenheim, Thomas, Jones, Robert, Heggie, Malcolm I.
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Volume:
595
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-595-f99w9.3
Date:
January, 1999
File:
PDF, 248 KB
english, 1999
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