Study on ZrO2 Deposited Directly on Si as an Alternative Gate Dielectric Material
Qi, Wen-Jie, Nieh, Renee, Lee, Byoung Hun, Jeon, Youngjoo, Kang, Laegu, Onishi, Katsunori, Lee, Jack C.Volume:
606
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-606-263
Date:
January, 1999
File:
PDF, 1.69 MB
english, 1999