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The Physical and Electrical Properties of Polycrystalline Si1−xGex as a Gate Electrode Material for ULSI CMOS Structures
Kang, Sung-Kwan, Ko, Dae-Hong, Ahn, Tae-Hang, Joo, Moon-Sik, Yeo, In-Seok, Whoang, Sung-Jin, Yang, Doo-Young, Whang, Chul-Joo, Lee, Hoo-JeongVolume:
611
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-611-c7.1.1
Date:
January, 2000
File:
PDF, 126 KB
english, 2000