Modeling of PVT Growth of Bulk SiC Crystals: General Trends...

MRS Proceedings 2000 / 1 Vol. 616

Modeling of PVT Growth of Bulk SiC Crystals: General Trends and 2” to 4” Reactor Scaling

Ramm, M.S., Kulik, A.V., Zhmakin, I.A., Karpov, S.Yu., Bord, O.V., Demina, S.E., Makarov, Yu.N.
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Volume:
616
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-616-227
Date:
January, 2000
File:
PDF, 1.07 MB
english, 2000
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