Arsenic Incorporation in Gallium Nitride grown by...

MRS Proceedings 2000 / 1 Vol. 622

Arsenic Incorporation in Gallium Nitride grown by Metalorganic Chemical Vapor Deposition using Dimethylhydrazine and Tertiarybutylarsenic

Kellermann, S., Yu, K. M., Haller, E. E., Bourret-Courchesne, E. D.
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Volume:
622
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-622-t6.11.1
Date:
January, 2000
File:
PDF, 111 KB
english, 2000
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