TEM Study of High Quality GaN Grown by OMVPE Using an...

MRS Proceedings 2000 / 1 Vol. 622

TEM Study of High Quality GaN Grown by OMVPE Using an Intermediate Layer

Benamara, M., Liliental-Weber, Z., Kellermann, S., Swider, W., Washburn, J., Mazur, J.H., Bourret-Courchesne, E. D.
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Volume:
622
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-622-t6.14.1
Date:
January, 2000
File:
PDF, 1.04 MB
english, 2000
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