Characterization of n-type layer by S+ ion implantation in...

MRS Proceedings 2000 / 1 Vol. 622

Characterization of n-type layer by S+ ion implantation in 4H-SiC

Tanaka, Yasunori, Kobayashi, Naoto, Okumura, Hajime, Yoshida, Sadafumi, Hasegawa, Masataka, Ogura, Masahiko, Tanoue, Hisao
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Volume:
622
Journal:
MRS Proceedings
DOI:
10.1557/proc-622-t8.6.1
Date:
January, 2000
File:
PDF, 449 KB
2000
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