High Resistivity GaN Formed by Ion Implantation
Kudo, Jun, Hishida, Yuji, Watanabe, Masanori, Hatayama, Tomoaki, Fuyuki, TakashiVolume:
639
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-639-g11.30
Date:
January, 2000
File:
PDF, 93 KB
english, 2000