Nucleation of GaN on (0001) sapphire during MOCVD growth:...

MRS Proceedings 2000 / 1 Vol. 639

Nucleation of GaN on (0001) sapphire during MOCVD growth: an atomic force and high resolution electron microscopy study

Degave, F., Ruterana, P., Nouet, G., Je, J.H., Kim, C.C.

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Volume:

639

Language:

english

Journal:

MRS Proceedings

DOI:

10.1557/proc-639-g3.41

Date:

January, 2000

File:

PDF, 4.92 MB

english, 2000

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