Investigation of silicon carbide physical vapor transport...

MRS Proceedings 2000 / 1 Vol. 640

Investigation of silicon carbide physical vapor transport growth on the C-terminated face of 6H seeds

Schulz, D., Doerschel, J., Irmscher, K., Rost, H.-J., Siche, D., Wollweber, J.
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Volume:
640
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-640-h1.8
Date:
January, 2000
File:
PDF, 1.94 MB
english, 2000
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