Defect Evolution in 4H-SiC Sublimation Epi-Layers Grown on...

MRS Proceedings 2000 / 1 Vol. 640

Defect Evolution in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers with Reduced Micropipe Density

Yakimova, R., Syväjärvi, M., Jacobsson, H., Kakanakova-Georgieva, A., Tuomi, T., Rendakova, S., Dmitriev, V., Janzén, E.
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Volume:
640
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-640-h2.1
Date:
January, 2000
File:
PDF, 2.91 MB
english, 2000
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