Hollow defect elimination during solution growth of SiC
Epelbaum, B. M., Hofmann, D., Müller, M., Winnacker, A.Volume:
640
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-640-h2.2
Date:
January, 2000
File:
PDF, 2.54 MB
english, 2000