Characterization of SiC grown on Ge modified silicon...

MRS Proceedings 2000 / 1 Vol. 640

Characterization of SiC grown on Ge modified silicon substrates

Pezoldt, J., Stauden, Th., Förster, Ch., Masri, P.
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Volume:
640
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-640-h5.7
Date:
January, 2000
File:
PDF, 686 KB
english, 2000
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