Modification of the electronic properties of a-Si1-xCx:H by...

MRS Proceedings 2000 / 1 Vol. 647

Modification of the electronic properties of a-Si1-xCx:H by Fe+ ion implantation

Tsvetkova, T., Balabanov, S., Amov, B., Angelov, Ch., Zuk, J., Maczka, D., Adriaenssens, G.J., Iakoubovskii, K.
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Volume:
647
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-647-o5.13
Date:
January, 2000
File:
PDF, 73 KB
english, 2000
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