Ge Island evolution during growth, in-situ anneal, and Si...

MRS Proceedings 2001 / 1 Vol. 664

Ge Island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor

Loo, Roger, Meunier-Beillard, Philippe, Dentel, Didier, Goryll, Michael, Vanhaeren, Danielle, Vescan, Lili, Bender, Hugo, Caymax, Matty, Vandervorst, Wilfried
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Volume:
664
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-664-a8.8
Date:
January, 2001
File:
PDF, 2.09 MB
english, 2001
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