Microstructure and Physical Properties of...

MRS Proceedings 2001 / 1 Vol. 666

Microstructure and Physical Properties of Ferroelectric-gate Memory Capacitors with Various Buffer Layers

Caragianis-Broadbridge, Christine, Han, Jin-ping, Ma, T. P., Lehman, Ann Hein, Zhu, Wenjuan, Luo, Zhijiong, Pechkis, Daniel L., Laube, Bruce L.
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Volume:
666
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-666-f8.5
Date:
January, 2001
File:
PDF, 642 KB
english, 2001
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