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A new model for Boron diffusion retardation in SiGe-strained layers accounting for the mechanism of Boron trapping/detrapping by Ge atoms.
Kol'dyaev, Victor I.Volume:
669
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-669-j3.4
Date:
January, 2001
File:
PDF, 97 KB
english, 2001