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InGaN-Channel FETs – Growth, Technology and Characteristics
Kohn, E., Daumiller, I., Neuburger, M., Seyboth, M., Kirchner, C., Kamp, M.Volume:
680
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-680-e3.1
Date:
January, 2001
File:
PDF, 152 KB
english, 2001