Growth of 3C-SiC Layers on Silicon Substrates with a Novel...

MRS Proceedings 2001 / 1 Vol. 680

Growth of 3C-SiC Layers on Silicon Substrates with a Novel Stress Relaxation Structure

Irokawa, Yoshihiro, Yamada, Noboru, Kodama, Masahito, Kachi, Tetsu
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
680
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-680-e3.11
Date:
January, 2001
File:
PDF, 857 KB
english, 2001
Conversion to is in progress
Conversion to is failed