Reduction of incorporation of B, Al, Ti and N in 4H-SiC...

MRS Proceedings 2001 / 1 Vol. 680

Reduction of incorporation of B, Al, Ti and N in 4H-SiC epitaxial-layer grown by chemical vapor deposition at higher growth temperature

Kushibe, Mitsuhiro, Masahara, Koh, Kojima, Kzutoshi, Ohno, Tshiyuki, Ishida, Yuki, Takahashi, Tetsuo, Nishio, Johji, Suzuki, Takaya, Tanaka, Tomoyuki, Yoshida, Sadahumi, Arai, Kazuo
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Volume:
680
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-680-e3.9
Date:
January, 2001
File:
PDF, 122 KB
english, 2001
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